FPD6836P70
L
OW
N
OISE
H
IGH
F
REQUENCY
P
ACKAGED P
HEMT
`
F
EATURES
:
•
•
•
•
•
•
22 dBm Output Power (P1dB)
15 dB Power Gain (G1dB) at 5.8 GHz
0.8 dB Noise Figure at 5.8 GHz
32 dBm Output IP3 at 5.8 GHz
45% Power-Added Efficiency at 5.8 GHz
Useable Gain to 18 GHz
Datasheet v3.0
P
ACKAGE
:
G
ENERAL
D
ESCRIPTION
:
The FPD6836P70 is a low parasitic, surface
mountable
packaged
depletion
mode
pseudomorphic
High
Electron
Mobility
Transistor (pHEMT) optimised for low noise,
high frequency applications.
T
YPICAL
A
PPLICATIONS
:
•
•
•
•
Gain blocks and medium power stages
WiMax (2-11GHz)
WLAN 802.11a (5.8GHz)
Point-to-Point Radio (to 18GHz)
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Power at 1dB Gain Compression
Small Signal Gain
Power-Added Efficiency
S
YMBOL
P1dB
SSG
PAE
C
ONDITIONS
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
POUT = P1dB
M
IN
T
YP
22
M
AX
U
NITS
dBm
dB
%
14
16
45
Maximum Stable Gain (S21/S12)
f
= 12 GHz
f
= 18 GHz
Noise Figure
Output Third-Order Intercept Point
MSG
VDS = 5 V; IDS = 55mA
15
12
NF
IP3
VDS = 5 V; IDS = 55mA,
VDS = 5V; IDS = 55mA
POUT = 10 dBm SCL
0.8
32
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
RθJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
≅
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.36mA
IGD = 0.36 mA
90
105
215
140
1
135
mA
mA
mS
10
1.3
µA
V
V
V
°C/W
0.7
12
14.5
1.0
14
16
275
Note: T
AMBIENT
= 22°C; RF specification measured at f = 5.8 GHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
