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FPD750DFN_1 参数 Datasheet PDF下载

FPD750DFN_1图片预览
型号: FPD750DFN_1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声高线性度PACKAGED PHEMT [LOW NOISE HIGH LINEARITY PACKAGED PHEMT]
分类和应用:
文件页数/大小: 9 页 / 499 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
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FPD750DFN
L
OW
N
OISE
H
IGH
L
INEARITY
P
ACKAGED P
HEMT
F
EATURES
(1850MH
Z
):
24 dBm Output Power (P1dB)
20 dB Small-Signal Gain (SSG)
0.3 dB Noise Figure
39 dBm Output IP3 at 50% Bias
45% Power-Added Efficiency
RoHS compliant
Datasheet v3.0
P
ACKAGE
:
RoHS
G
ENERAL
D
ESCRIPTION
:
The FPD750DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and input power
levels.
T
YPICAL
A
PPLICATIONS
:
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Power at 1dB Gain Compression
Small-Signal Gain
S
YMBOL
P1dB
SSG
C
ONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
M
IN
22.5
19
T
YP
24
20
M
AX
U
NITS
dBm
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
45
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
0.7
0.3
1.1
0.9
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
37
39
180
230
375
200
1
0.7
12
12
1.0
16
16
15
1.3
280
mA
mA
mS
µA
V
V
V
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75mA
IGD = 0.75 mA
Note: T
AMBIENT
= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com