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FPD750SOT89CE 参数 Datasheet PDF下载

FPD750SOT89CE图片预览
型号: FPD750SOT89CE
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声高线性度PACKAGED PHEMT [LOW NOISE HIGH LINEARITY PACKAGED PHEMT]
分类和应用: 晶体晶体管
文件页数/大小: 12 页 / 849 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
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FPD750SOT89
Datasheet v3.0
T
YPICAL
T
UNED
RF P
ERFORMANCE
:
Power Transfer Characteristic
VDS = 5V IDS = 50% IDSS at
f
= 1.85 GHz
26.0
3.50
25.5
Pout (dBm)
Comp Point
Drain Efficiency and PAE
60.0%
60.0%
PAE
Eff.
3.00
Gain Compression (dB)
2.50
50.0%
25.0
Output Power (dBm)
50.0%
Drain Efficiency (%)
24.5
24.0
23.5
23.0
22.5
22.0
4
5
6
7
8
Input Power (dBm)
9
10
11
12
2.00
1.50
1.00
0.50
PAE (%)
40.0%
40.0%
30.0%
30.0%
20.0%
20.0%
0.00
-0.50
10.0%
1
3
5
7
Input Power (dBm)
9
11
10.0%
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at V
DS
= 5V, I
DS
= 50%
of I
DSS
, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum
output power at 1dB gain compression.
Typical Intermodulation Performance
VDS = 5V IDS = 50% IDSS at f = 1.85GHz
-23.00
20
Pout (dBm)
3rds (dBc)
18
Output Power (dBm)
-28.00
16
-33.00
14
-38.00
12
10
-7.1
-6.0
-5.0
-4.0
-3.0
-2.1
-1.0
0.0
1.0
1.9
Input Power (dBm)
-43.00
Note:
pHEMT
devices have
enhanced
intermodulation performance. This yields OIP3
values of about P
1dB
+ 14dBm. This IMD
enhancement is affected by the quiescent bias and
the matching applied to the device
.
DC IV Curves FPD750SOT89
0.30
0.25
0.20
0.15
0.10
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
0.05
Note: The recommended method for measuring I
DSS
, or
any particular I
DS
, is to set the Drain-Source voltage (V
DS
)
at 1.3V. This measurement point avoids the onset of
spurious self-oscillation which would normally distort the
current measurement (this effect has been filtered from
the I-V curves presented above). Setting the V
DS
> 1.3V
will generally cause errors in the current measurements,
even in stabilized circuits.
Drain-Source Current (A)
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
3rd Order IM Products (dBc)
Website:
www.filtronic.com