FPD750
0.5W P
OWER P
HEMT
F
EATURES
:
•
•
•
•
•
27.5 dBm Linear Output Power at 12 GHz
11.5 dB Power Gain at 12 GHz
14.5 dB Max Stable Gain at 12 GHz
38 dBm Output IP3
50% Power-Added Efficiency
Datasheet v3.0
L
AYOUT
:
G
ENERAL
D
ESCRIPTION
:
The
FPD750
is
an
AlGaAs/InGaAs
pseudomorphic
High
Electron
Mobility
Transistor (PHEMT), featuring a 0.25
µm
by
750
µm
Schottky barrier gate, defined by high-
resolution stepper-based photolithography.
The double recessed gate structure minimizes
parasitics to optimize performance.
The
epitaxial structure and processing have been
optimized for reliable high-power applications.
The FPD750 also features Si
3
N
4
passivation
and is available in the low cost plastic SOT89
SOT343 and DFN packages.
T
YPICAL
A
PPLICATIONS
:
•
•
•
•
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
E
LECTRICAL
S
PECIFICATIONS
1
:
P
ARAMETER
Power at 1dB Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P1dB
Power-Added Efficiency
Output Third-Order Intercept Point
IP3
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
Matched for optimal power; Tuned for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
≅
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 6V
12.0
14.5
185
40
230
370
200
10
1.0
14.0
16.0
65
280
dBm
mA
mA
mS
µA
V
V
V
°C/W
S
YMBOL
P1dB
MSG
G1dB
PAE
C
ONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
VDS = 8V; IDS = 50% IDSS
M
IN
26.5
13.5
10.5
T
YP
27.5
14.5
11.5
45
38
M
AX
U
NITS
dBm
dB
dB
%
θ
JC
Note:
1
T
Ambient
= 22°C; RF specifications measured at
f
= 12 GHz using CW signal
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
