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LP1500P100 参数 Datasheet PDF下载

LP1500P100图片预览
型号: LP1500P100
PDF下载: 下载PDF文件 查看货源
内容描述: PACKAGED 1W功率PHEMT [PACKAGED 1W POWER PHEMT]
分类和应用:
文件页数/大小: 3 页 / 51 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
 浏览型号LP1500P100的Datasheet PDF文件第2页浏览型号LP1500P100的Datasheet PDF文件第3页  
P
ACKAGED
1W P
OWER
PHEMT
FEATURES
31 dBm Output Power at 1-dB Compression at 15 GHz
9 dB Power Gain at 15 GHz
42 dBm Output IP3 at 15GHz
60% Power-Added Efficiency
LP1500P100
DESCRIPTION AND APPLICATIONS
The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
µm
x 1500
µm
Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
°
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
Symbol
I
DSS
P-1dB
G-1dB
PAE
IP3
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
;
P
IN
= 17 dBm
V
DS
= 8V; I
DS
= 50% I
DSS
;
P
IN
= 10 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 5 mA
I
GS
= 8 mA
I
GD
= 8 mA
-0.25
-12
-12
300
Min
375
29.5
8
Typ
490
31
9
60
42
925
400
10
-1.2
-15
-16
100
-2.0
Max
600
Units
mA
dBm
dB
%
dBm
mA
mS
µA
V
V
V
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com