LP1500SOT2232 参数 Datasheet PDF下载

Filtronic

Solid State

FEATURES

LP1500SOT223

Low Noise, High Linearity Packaged PHEMT

•

•

•

•

•

+27 dBm Typical Power at 1800 MHz

15 dB Typical Power Gain at 1800 MHz

1.0 dB Typical Noise Figure

+42 dBm Typical Intercept Point

Color-coded by I

DSS

range

GATE

SOURCE

SOURCE

DRAIN

(TOP VIEW)

DESCRIPTION AND APPLICATIONS

The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25

µm

by 1500

µm

Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.

The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also

features Si

3

N

4

passivation and is available in a die form or in a flanged ceramic package (P100) for high-power

applications, or in the SOT-89 plastic package.

Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power

amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot

screening is patterned after MIL-STD-19500, JANC grade.

PERFORMANCE SPECIFICATIONS (T

A

= 25°C)

SYMBOLS

I

DSS

P

1dB

G

1dB

NF

IP3

I

MAX

G

M

V

P

I

GSO

BV

GS

BV

GD

LP1500-SOT223-1 BLUE

LP1500-SOT223-2 GREEN

LP1500-SOT223-3 RED

Output Power at 1dB Gain Compression

f

= 1800 Mhz

V

DS

= 3.3V, I

DS

= 33% I

DSS

Power Gain at 1dB Gain Compression

f

= 1800 MHz

V

DS

= 3.3V, I

DS

= 33% I

DSS

Noise Figure

V

DS

= 3.3V, I

DS

= 33% I

DSS

,

f

= 1.8 GHz

Output Intercept Point V

DS

= 3.3V, I

DS

= 33% I

DSS

,

f

= 1.8 GHz

Maximum Drain-Source Current

V

DS

= 2V V

GS

= +1V

Transconductance

V

DS

= 2V V

GS

= 0V

Pinch-Off Voltage

V

DS

= 2V I

DS

= 5mA

Gate-Source Leakage Current

V

GS

= -3V

Gate-Source Breakdown Voltage

I

GS

= 8mA

Gate-Drain Breakdown Voltage

I

GD

= 8mA

PARAMETERS

Saturated Drain-Source Current

V

DS

= 2V V

GS

= 0V

MIN

375

451

527

25.0

13.5

TYP

420

490

560

27.0

15.0

1.0

42

925

400

-1.2

10

-10

-11

MAX

450

526

600

UNITS

mA

dBm

dB

dB

dBm

mA

mS

V

µA

V

V

300

-0.25

-8

-8

-2.0

75

DSS-026 WF

Phone:

(408) 988-1845

Internet:

Fax:

(408) 970-9950