LP6836P70 参数 Datasheet PDF下载

P

ACKAGED

M

EDIUM

P

OWER

PHEMT

•

FEATURES

♦

23 dBm Output Power at 1-dB Compression at 15 GHz

♦

11.5 dB Power Gain at 15 GHz

♦

50% Power-Added Efficiency

LP6836P70

•

DESCRIPTION AND APPLICATIONS

The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic

range.

It utilizes a 0.25

µm

x 360

µm

Schottky barrier gate, defined by electron-beam

photolithography.

Typical applications include pre-drivers in commercial wireless infrastructure and radio link high-

performance power amplifiers.

•

ELECTRICAL SPECIFICATIONS @ T

Ambient

= 25°C*

°

Parameter

Saturated Drain-Source Current**

Power at 1-dB Compression

Power Gain at 1-dB Compression

Power-Added Efficiency

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown

Voltage Magnitude

Symbol

I

DSS

P-1dB

G-1dB

PAE

I

MAX

G

M

I

GSO

V

P

|V

BDGS

|

Test Conditions

V

DS

= 2 V; V

GS

= 0 V

V

DS

= 5 V; I

DS

= 50% I

DSS

V

DS

= 5 V; I

DS

= 50% I

DSS

V

DS

= 5 V; I

DS

= 50% I

DSS

;

P

IN

= 20 dBm

V

DS

= 2 V; V

GS

= 1 V

V

DS

= 2 V; V

GS

= 0 V

V

GS

= -5 V

V

DS

= 2 V; I

DS

= 2 mA

I

GS

= mA

-0.25

-11

70

Min

80

22

10.5

23

12

50

190

95

1

-0.8

-15

15

-2.0

Typ

Max

125

Units

mA

dBm

dB

%

mA

mS

µA

V

V

Gate-Drain Breakdown

|V

BDGD

|

I

GD

= 2 mA

-12

-16

V

Voltage Magnitude

*frequency=15 GHz, unless otherwise noted

**Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70–2 = 96-105 mA, and LP6836P70-3 = 106-125 mA

Phone:

(408) 988-1845

Fax:

(408) 970-9950

http://

www.filss.com

Revised:

1/22/01

Email:

sales@filss.com