PRELIMINARY DATA SHEET
LP6836SOT343
P
ACKAGED
M
EDIUM
P
OWER
PHEMT
•
FEATURES
♦
0.5 dB Noise Figure at 2 GHz
♦
19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
♦
20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
♦
70% Power-Added-Efficiency
•
DESCRIPTION AND APPLICATIONS
The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range.
It utilizes a 0.25
µm
x 360
µm
Schottky barrier gate, defined by electron-beam
photolithography. The LP6836’s active areas are passivated with Si
3
N
4
, and the SOT343 (also
known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-
mount package.
The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
°
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Noise Figure
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Symbol
I
DSS
P-1dB
G-1dB
PAE
NF
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
;
P
OUT
= 19.5 dBm
f=2GHz; V
DS
= 3V; I
DS
= 25% I
DSS
f=2GHz; V
DS
= 3V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 2 mA
I
GS
= 2 mA
I
GD
= 2 mA
-0.25
11
12
15
16
75
Min
80
18
18
19
20
70
0.5
0.7
100
1
10
-2.0
Typ
Max
125
Units
mA
dBm
dB
%
dB
dB
mS
µA
V
V
V
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
