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LP6836P100-2 参数 Datasheet PDF下载

LP6836P100-2图片预览
型号: LP6836P100-2
PDF下载: 下载PDF文件 查看货源
内容描述: 包装0.25W功率PHEMT [Packaged 0.25W Power PHEMT]
分类和应用:
文件页数/大小: 2 页 / 26 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
 浏览型号LP6836P100-2的Datasheet PDF文件第2页  
Filtronic
Solid State
FEATURES
LP6836P100
Packaged 0.25W Power PHEMT
GATE
+24.5 dBm Typical Power at 15 GHz
12 dB Typical Power Gain at 15 GHz
Low Intermodulation Distortion
55% Power-Added-Efficiency
Color-coded by I
DSS
range
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
µm
by 360
µm
Schottky barrier
gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si
3
N
4
passivation and is available in die form, or P70 packages. Packages are color-coded by I
DSS
range.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters.
The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (T
A
= 25°C)
SYMBOLS
I
DSS
PARAMETERS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
LP6836-P100-1 Blue
LP6836-P100-2 Green
LP6836-P100-3 Red
Output Power at 1dB Gain Compression
f
= 15 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
Power Gain at 1dB Gain Compression
f
= 15 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
Power-Added Efficiency
Maximum Drain-Source Current
V
DS
= 2V V
GS
= +1V
Transconductance
V
DS
= 2V V
GS
= 0V
Pinch-Off Voltage
V
DS
= 2V I
DS
= 2mA
Gate-Source Leakage Current
V
GS
= -5V
Gate-Source Breakdown Voltage
I
GS
= 2mA
Gate-Drain Breakdown Voltage
I
GD
= 2mA
MIN
80
96
106
23.5
8.5
TYP
90
100
115
24.5
9.5
55
190
95
-0.8
1
-15
-16
MAX
95
105
125
UNITS
mA
P
1dB
G
1dB
η
ADD
I
MAX
G
M
V
P
I
GSO
BV
GS
BV
GD
dBm
dB
%
mA
mS
V
µA
V
V
70
-0.25
-11
-12
-1.5
15
DSS-031 WF
Phone:
(408) 988-1845
Internet:
Fax:
(408) 970-9950