LP750P100 参数 Datasheet PDF下载

LP750P100

P

ACKAGED

0.5 W

ATT

P

OWER

PHEMT

•

FEATURES

♦

♦

♦

♦

♦

•

41 dBm IP3 at 12 GHz

27.5 dBm P-1dB at 12 GHz

10.5 dB Power Gain at 12 GHz

2.5 dB Noise Figure at 12 GHz

60% Power-Added-Efficiency

DESCRIPTION AND APPLICATIONS

The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide

(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an

Electron-Beam direct-write 0.25

µm

Schottky barrier gate. The recessed “mushroom” gate structure

minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have

been optimized for reliable high-power/low-noise applications. The LP750 also features Si

3

N

4

passivation and is available in die form or in surface-mount packages.

The LP750P100 is designed for medium-power, linear amplification. This device is suitable for

applications in commercial and military environments, and it is appropriate to be used as a medium

power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high

efficiency amplifiers, and WLL systems.

•

ELECTRICAL SPECIFICATIONS @ T

Ambient

= 22 ± 3 °C

Parameter

Output Power @

1 dB Compression

Power Gain @

1 dB Compression

Maximum Available Gain

Noise Figure

Power-Added Efficiency

Output Intercept Point

Saturated Drain-Source Current

Transconductance

Pinch-Off Voltage

Gate-Drain Breakdown

Voltage Magnitude

Gate-Source Breakdown

Voltage Magnitude

Gate-Source Leakage

Current Magnitude

Symbol

P

1dB

G

1dB

MAG

NF

η

IP

3

I

DSS

G

M

V

P

|V

BDGD

|

|V

BDGS

|

|I

GSL

|

Test Conditions

f = 12GHz; V

DS

= 8V; I

DS

= 50% I

DSS

f = 12GHz; V

DS

= 8V; I

DS

= 50% I

DSS

f = 12GHz; V

DS

= 8V; I

DS

= 50% I

DSS

f = 12GHz; V

DS

= 5V; I

DS

= 33% I

DSS

f = 12GHz; V

DS

= 5V; I

DS

= 50% I

DSS

;

P

OUT

= 25dBm

f = 12GHz; V

DS

= 8V; I

DS

= 50% I

DSS

;

P

OUT

= 10dBm

V

DS

= 2V; V

GS

= 0V

V

DS

= 2V; V

GS

= 0V

V

DS

= 2V; I

DS

= 4mA

I

GD

= 4mA

I

GS

= 4mA

V

GS

= -5V

180

230

-2.0

12

12

280

-1.2

15

16

5

45

-0.25

Min

26.0

9.0

Typ

27.5

10.5

14.0

2.5

60

41

265

Max

Units

dBm

dB

dB

dB

%

dBm

mA

mS

V

V

V

µA

Phone:

(408) 988-1845

Fax:

(408) 970-9950

http://

www.filtronicsolidstate.com

Revised:

03/02/01

Email:

sales@filss.com