LP750SOT89
L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMT
•
FEATURES
♦
26 dBm Output Power at 1-dB Compression at 1.8 GHz
♦
17 dB Power Gain at 1.8 GHz
♦
0.7 dB Noise Figure
♦
40 dBm Output IP3 at 1.8 GHz
♦
55% Power-Added Efficiency
•
DESCRIPTION AND APPLICATIONS
The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
µm
x 750
µm
Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP750 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
Parameter
Saturated Drain-Source Current
LP750SOT89-1
LP750SOT89-2
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=1.8 GHz
P-1dB
G-1dB
PAE
NF
IP3
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 10 dBm
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
;
P
IN
= -7 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 4 mA
I
GS
= 4 mA
I
GD
= 4 mA
-0.25
-10
-10
170
Symbol
I
DSS
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
180
231
24
15.5
26
17
55
0.7
40
450
220
5
-1.2
-12
-13
45
-2.0
230
265
mA
mA
dBm
dB
%
dB
dBm
mA
mS
µA
V
V
V
Min
Typ
Max
Units
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/02
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
