U
LTRA
L
OW
N
OISE
PHEMT
•
FEATURES
♦
0.6 dB Noise Figure at 12 GHz
♦
12 dB Associated Gain at 12 GHz
♦
Low DC Power Consumption
♦
Excellent Phase Noise
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
LP7512
SOURCE
BOND
PAD (2x)
DIE SIZE: 18.0X13.0 mils (460x330
µm)
DIE THICKNESS: 3.9 mils (100
µm)
BONDING PADS: 1.9X1.9 mils (50x50
µm)
•
DESCRIPTION AND APPLICATIONS
The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
µm
by 200
µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si
3
N
4
passivation and is available in a variety of packages.
Typical applications include low noise receiver preamplifiers for commercial applications including
wireless systems and radio link systems.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
°
Parameter
Saturated Drain-Source Current
Noise Figure
Associated Gain at minimum
NF
Transconductance
Gate-Source Leakage Current
Gate-Drain Leakage Current
Pinch-Off Voltage
Thermal Resistivity
frequency=18 GHz
Symbol
I
DSS
NF
G
A
G
M
I
GSO
I
GDO
V
P
Θ
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 25% I
DSS
; f=12 GHz
f=18 GHz
V
DS
= 2 V; I
DS
= 25% I
DSS
; f=12 GHz
f=18 GHz
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -3 V
V
GD
= -3 V
V
DS
= 2 V; I
DS
= 1 mA
-0.25
9
7.5
60
Min
15
Typ
35
0.6
1.0
10
8.5
90
1
1
-0.8
325
10
10
-1.5
Max
50
0.9
1.4
Units
mA
dB
dB
dB
dB
mS
µA
µA
V
°C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/01
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
