Filtronic
Solid State
FEATURES
LPV1500
1 W Power PHEMT
DRAIN
DRAIN
•
•
•
•
•
•
+31.5 dBm Typical Power at 18 GHz
8.5 dB Typical Power Gain at 18 GHz
+27 dBm at 3.3V Battery Voltage
+45 dBm Typical Intercept Point
50% Power-Added-Efficiency at 18 GHz
Plated Source Thru-Vias
SOURCE
GATE
DIE SIZE: 16.5 x 16.1 mils (420 x 410
µm)
DIE THICKNESS: 3.0 mils (75
µm
typ.)
BONDING PADS: 1.9 x 2.4 mils (50 x 60
µm
typ.)
DESCRIPTION AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High
Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
µm
by 1500
µm
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for reliable high-power applications. The LP1V500 also features Si
3
N
4
passivation
and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved
performance.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The
LP1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is
patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (T
A
= 25°C)
SYMBOLS
I
DSS
P
1dB
G
1dB
IP3
η
ADD
I
MAX
G
M
V
P
I
GSO
BV
GS
BV
GD
Θ
J
PARAMETERS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
Output Power at 1dB Gain Compression
f
= 18 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
Power Gain at 1dB Gain Compression
f
= 18 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
Output 3rd-Order Intercept Pt. V
DS
= 8V, I
DS
= 40% I
DSS
,
Power-Added Efficiency
Maximum Drain-Source Current
V
DS
= 2V V
GS
= +1V
Transconductance
V
DS
= 2V V
GS
= 0V
Pinch-Off Voltage
V
DS
= 2V I
DS
= 5mA
Gate-Source Leakage Current
V
GS
= -5V
Gate-Source Breakdown Voltage
I
GS
= 8mA
Gate-Drain Breakdown Voltage
I
GD
= 8mA
Thermal Resistivity
MIN
375
TYP
490
MAX
600
UNITS
mA
30.0
6.5
31.5
8.5
45
50
925
450
-1.2
10
-15
-16
45
dBm
dB
dBm
%
mA
mS
V
µA
V
V
°C/W
350
-0.25
-12
-12
-2.0
75
DSS-041 WA
Phone:
(408) 988-1845
Internet:
Fax:
(408) 970-9950
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
