DATA
SHEET
10GBPS 850NM VCSEL
ARRAYS
V850-2106-001, V850-TBD-001
FEATURES:
850nm isolated cathode and
anode VCSEL array
Capable of 10Gbps per channel
modulation
Capable of flip chip mounting
The V850-2106-001 and the V850-TBD-001 are high-performance 850 nm
VCSEL (Vertical Cavity Surface-Emitting Laser) array die optimized for high-
speed data communications. The array die are ideal for use in manufacturing
transceivers for parallel optical interconnects. The arrays are available in either
4 or 12 channel configurations.
Each device is a high radiance VCSEL designed to convert electrical current into
optical power that can be used in fiber optic communications and other
applications. As the current varies above threshold, the light intensity
increases proportionally.
The V850-2106-001 and the V850-TBD-001are designed to be used with
inexpensive silicon or gallium arsenide detectors, but excellent performance
can also be achieved with some indium gallium arsenide detectors.
The low drive current requirement makes direct drive from PECL (Positive
Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and eases
driver design.
Designed to interface with 50/125 and 62.5/125um multimode fiber, the
VCSELs produce circularly symmetric, non-astigmatic, narrow divergence
beams that, with appropriate lensing, fiber couple all of the emitter power.
The dual top side contacts provide a minimum 1um Au for ease of wire
bonding. Wire bonding should be done with minimal pressure to ensure the
VCSEL is not damaged. The die must be mounted using thermally conductive
media.
The VCSEL arrays are shipped on medium tack blue tape in 6 inch grip rings.
Part Number
V850-2106-001
Description
10Gbps 4 channel VCSEL die array, dual top side contact, semi-
insulating substrate.
10Gbps 12 channel VCSEL die array, dual top side contact, semi-
insulating substrate
V850-TBD-001
FINISAR [ FINISAR CORPORATION. ]
