Formosa MS
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 115mA DC and can deliver pulsed currents up to
800mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
CMT2N7002
S
MALL
S
IGNAL
MOSFET
FEATURES
High Density Cell Design for Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
PIN CONFIGURATION
SOT-23
SYMBOL
D
Top View
3
DRAIN
SOURCE
G
GATE
1
2
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7002
CMT2N7002G*
*Note:
G : Suffix for Pb Free Product
Package
SOT-23
SOT-23
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0MΩ)
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25℃
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 50V, V
GS
= 10V, I
AS
= 0.8A, L = 30mH, R
G
= 25Ω)
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
-55 to 150
417
300
℃
℃/W
℃
E
AS
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
D
Value
60
60
±115
±800
±20
±40
225
1.8
9.6
V
V
mW
mW/℃
mJ
Unit
V
V
mA
FORMOSA [ FORMOSA MS ]
