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FM120 参数 Datasheet PDF下载

FM120图片预览
型号: FM120
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片肖特基势垒二极管 - 硅外延平面型 [Chip Schottky Barrier Diodes - Silicon epitaxial planer type]
分类和应用: 二极管
文件页数/大小: 2 页 / 74 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号FM120的Datasheet PDF文件第2页  
Chip Schottky Barrier Diodes
FM120-L THRU FM1100-L
Silicon epitaxial planer type
Formosa MS
SMA-L
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
88
120
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
SS12
SS13
SS14
SS15
SS16
SS18
S110
V
RRM
20
30
40
50
60
80
*1
V
RMS
14
21
28
35
42
56
70
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
(V)
(V)
20
30
40
50
60
80
100
(V)
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70
-55 to +150
0.85
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
100