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FM550 参数 Datasheet PDF下载

FM550图片预览
型号: FM550
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片肖特基势垒二极管 - 硅外延平面型 [Chip Schottky Barrier Diodes - Silicon epitaxial planer type]
分类和应用: 二极管光电二极管瞄准线功效
文件页数/大小: 2 页 / 83 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号FM550的Datasheet PDF文件第2页  
Chip Schottky Barrier Diodes
FM520 THRU FM5100
Silicon epitaxial planer type
Formosa MS
SMC
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.032(0.8) Typ.
0.040(1.0) Typ.
0.152(3.8)
0.144(3.6)
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE DO-214AB
C
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting P
osition : Any
Weight : 0.00585 ounce, 0.195 gr am
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
5.0
150
0.5
50
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
15
380
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
SS52
SS53
SS54
SS55
SS56
SS58
S510
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
FM520
FM530
FM540
FM550
FM560
FM580
FM5100
20
30
40
50
60
80
100
(V)
14
21
28
35
42
56
70
(V)
20
30
40
50
60
80
100
(V)
0.55
-55 to +125
*1 Repetitive peak reverse voltage
0.70
-55 to +150
0.85
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage