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FM5822 参数 Datasheet PDF下载

FM5822图片预览
型号: FM5822
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片肖特基势垒二极管 - 硅外延平面型 [Chip Schottky Barrier Diodes - Silicon epitaxial planer type]
分类和应用: 二极管光电二极管瞄准线功效
文件页数/大小: 2 页 / 72 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号FM5822的Datasheet PDF文件第2页  
Chip Schottky Barrier Diodes
FM5820-B THRU FM5822-B
Silicon epitaxial planer type
Formosa MS
SMB
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.142(3.6)
0.126(3.2)
0.173(4.4)
0.157(4.0)
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.00878 ounce, 0.293 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
3.0
80
0.5
20
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Operating temperature
I
R
Rq
JA
C
J
T
STG
-55
250
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
55
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
SK32
SK33
SK34
V
RRM
20
30
40
*1
V
RMS
14
21
28
*2
V
R
*3
V
F
*4
Storage
temperature
(
o
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
(V)
FM5820
FM5821
FM5822
(V)
(V)
20
30
40
(V)
0.475
0.500
0.525
-55 to +125
*3 Continuous reverse voltage
*4 Maximum forward voltage