Chip Silicon Rectifier
HFM101 thru HFM108
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
PATENT PUBLICATION NO. 37116
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE DO-214AC
C
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting P
osition : Any
Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 50
o
C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
30
5.0
150
UNIT
A
A
uA
uA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
J
-55
32
20
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
H11
H12
H13
H14
H15
H16
H17
H18
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
T
RR
*5
Operating
temperature
(
o
C)
(V)
HFM101
HFM102
HFM103
HFM104
HFM105
HFM106
HFM107
HFM108
50
100
200
300
400
600
800
1000
(V)
35
70
140
210
280
420
560
700
(V)
50
100
200
300
400
600
800
1000
(V)
(nS)
1.0
50
*1 Repetitive peak reverse voltage
1.3
-55 to +150
*2 RMS voltage
*3 Continuous reverse voltage
1.85
70
*4 Maximum forward voltage
*5 Reverse recovery time
FORMOSA [ FORMOSA MS ]
