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LL4448 参数 Datasheet PDF下载

LL4448图片预览
型号: LL4448
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面型 [Silicon epitaxial planar type]
分类和应用: 二极管
文件页数/大小: 2 页 / 66 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号LL4448的Datasheet PDF文件第2页  
MINI-MELF Switching Diode
LL4448
Silicon epitaxial planar type
Formosa MS
SOD-80
Features
Small surface mounting type
High reliability
High speed ( t
rr
< 4 ns )
SOLDERABLE
ENDS
.146(3.7)
.130(3.3)
.012(.30)
.063(1.6)
.055(1.4)
Mechanical data
Dimensions in inches and (millimeters)
Case : Glass, SOD-80 (MI I-MELF)
N
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cat hode band
Mounting Position : Any
Weight : 0.015 gram
o
MAXIMUM RATINGS
(AT T
A
=25 C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
V
R
= 0
t
p
= 1 us
CONDITIONS
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
T
j
T
STG
-55
MIN.
TYP.
MAX.
100
75
2.0
500
300
150
500
175
+175
UNIT
V
V
A
mA
mA
mA
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
I
F
= 100mA
V
R
= 20V
Reverse current
V
R
= 20V , T
j
= 150
o
C
V
R
= 75V
Breakdown current
Diode capacitance
Rectification efficiency
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
R
= 0 , f = 1MHz , V
HF
= 50mV
V
HF
= 2V , f = 100MHz
I
F
= I
R
= 10mA , I
RR
= 1mA
Reverse recovery time
I
F
=10mA, V
R
=6V, I
RR
= 0.1 X I
R
, R
L
=100
OHM
CONDITIONS
Symbol
V
F
I
R
I
R
I
R
V
(BR)
C
D
n
R
t
rr
t
rr
45
8
4
100
4.0
MIN.
TYP.
0.93
MAX.
1.00
25
50
5.0
UNIT
V
nA
uA
uA
V
pF
%
ns
ns