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SL12 参数 Datasheet PDF下载

SL12图片预览
型号: SL12
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面型 [Silicon epitaxial planer type]
分类和应用:
文件页数/大小: 2 页 / 71 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号SL12的Datasheet PDF文件第2页  
Low VF Chip Schottky Barrier Diodes
SL12-M AND SL14-M
Silicon epitaxial planer type
Formosa MS
SOD-123
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.063(1.6)
0.055(1.4)
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.04 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
42
130
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
L2
L4
V
RRM
20
40
*1
V
RMS
14
28
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
-55 to +125
(V)
SL12
SL14
(V)
(V)
20
40
(V)
0.38
0.40
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage