N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
FEATURES
Part No
FSM75N75
V
D S S
(at Tj(max))
75V
R
D S ( o n )
<0.011Ω
I
D
80A
GENERAL DESCRIPTION
This Power MOSFET series has specifically been
designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in
advanced high-efficiency, high-frequency isolated
DC-DC converters for Telecom and Computer
applications. It is also intended for any applications
with low gate drive requirements.
Exceptional dv/dt capability
100% avalanche tested
Low intrinsic capacitances
ADVANTAGES
Easy to mount
Space savings
High power density
APPLICATIONS
DC motor control
Solenoid and relay drivers
DC-DC Converters
Automotive environment
INTERNAL SCHEMATIC DIAGRAM AND EXTERIOR
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
dv/dt
E
AS
T
J
T
stg
Parameter
T
J
= 25°C to 150°C
Continuous
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed with limited by T
JM
) at T
C
= 25°C
T
J
= 25°C
Derating Factor
Peak diode recovery voltage slope
(I
SD
≤80A,
di/dt≤300A/µs, V
DD
≤V
(BR)DSS
, T
J
≤T
JMAX
)
T
J
= 25°C, I
D
= 40A, V
DD
= 38V
Max operating junction temperature
Storage temperature
Rating
75
± 20
80
65
320
200
1.5
15
700
160
-55 to 160
A
A
W
W/°C
V/ns
mJ
°C
°C
Unit
V
V
1/9
2007-7-27
FOSLINK [ FOSLINK SEMICONDUCTOR CO.,LTD ]
