Freescale Semiconductor
Technical Data
Document Number: MMG15241H
Rev. 0, 12/2010
Enhancement Mode pHEMT
Technology (E-
-pHEMT)
High Linearity Amplifier
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed
in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain
.
Features
•
Frequency: 500--2800 MHz
•
Noise Figure: 1.6 dB @ 2140 MHz
•
P1dB: 24 dBm @ 2140 MHz
•
Small--Signal Gain: 15.9 dB @ 2140 MHz
•
Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz
•
Single 5 Volt Supply
•
Supply Current: 85 mA
•
50 Ohm Operation (some external matching required)
•
Low Cost SOT--89 Surface Mount Package
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical Performance
(1)
Characteristic
Noise Figure
Input Return Loss
(S11)
Output Return Loss
(S22)
Small--Signal Gain
(S21)
Power Output @
1dB Compression
Third Order Input
Intercept Point
Third Order Output
Intercept Point
Symbol
NF
IRL
ORL
G
p
P1db
IIP3
OIP3
900
MHz
1.2
--11.8
--13.4
20.5
24
18.2
38.7
2140
MHz
1.6
--21.3
--16.2
15.9
24
23.5
39.4
2600
MHz
1.3
--16.9
--20.9
14.4
24
26.2
40.6
Unit
dB
dB
dB
dB
dBm
dBm
dBm
MMG15241HT1
500-
-2800 MHz, 15.9 dB
24 dBm
E-
-pHEMT
CASE 2142-
-01
SOT-
-89A
PLASTIC
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
DD
I
DD
P
in
T
stg
T
J
Value
6
130
13
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
DD
= 5 Vdc, T
A
= 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied
Symbol
R
θJC
Value
(3)
59
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MMG15241HT1
1
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
