Freescale Semiconductor
Technical Data
Document Number: AFT05MS031N
Rev. 0, 6/2012
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Typical Performance:
(13.6 Vdc, T
A
= 25°C, CW)
Frequency
(MHz)
380--450
(1,3)
450--520
(2,3)
520
(4)
G
ps
(dB)
18.3
17.7
17.7
η
D
(%)
64.1
62.0
71.4
P1dB
(W)
31
31
33
TO-
-270-
-2
PLASTIC
AFT05MS031NR1
AFT05MS031NR1
AFT05MS031GNR1
136-
-520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Load Mismatch/Ruggedness
Frequency
(MHz)
520
(4)
Signal
Type
CW
VSWR
>65:1 at all
Phase Angles
P
out
(W)
47
(3 dB Overdrive)
Test
Voltage
17
Result
No Device
Degradation
1. Measured in 380--450 MHz UHF wideband reference circuit.
2. Measured in 450--520 MHz UHF wideband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
4. Measured in 520 MHz narrowband test circuit.
TO-
-270- GULL
-2
PLASTIC
AFT05MS031GNR1
Features
•
Characterized for Operation from 136 to 520 MHz
•
Unmatched Input and Output Allowing Wide Frequency Range Utilization
•
Integrated ESD Protection
•
Integrated Stability Enhancements
•
Wideband — Full Power Across the Band:
−
136--174 MHz
−
380--450 MHz
−
450--520 MHz
•
225°C Capable Plastic Package
•
Exceptional Thermal Performance
•
High Linearity for: TETRA, SSB, LTE
•
Cost--effective Over--molded Plastic Packaging
•
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
•
Output Stage VHF Band Mobile Radio
•
Output Stage UHF Band Mobile Radio
Gate
Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT05MS031NR1 AFT05MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.