TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
3rd Order
−40
−50
−60
−70
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200 300
5th Order
7th Order
V
DD
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
−10
V
DD
= 28 Vdc, P
out
= 120 W (PEP)
I
DQ
= 1100 mA, Two −Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 465 MHz
IM3 −U
−30
IM5 −L
IM7 −U
−50
IM7 −L
IM3 −L
IM5 −U
−40
−60
1
10
TWO −TONE SPACING (MHz)
100
Figure 7. Intermodulation Distortion Products
versus Output Power
59
58
P
out
, OUTPUT POWER (dBm)
57
56
55
54 P1dB = 51.16 dBm (130.62 W)
53
52
51
50
49
24
25
26
27
28
29
30
31
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Ideal
P6dB = 52.98 dBm (198.6 W)
P3dB = 52.26 dBm (168.27 W)
Actual
V
DD
= 28 Vdc, I
DQ
= 1100 mA
CW
f = 465 MHz
32
33
34
35
36
P
in
, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
50
45
40
35
30
25
20
15
10
5
0
1
85_C
25_C
10
P
out
, OUTPUT POWER (WATTS) AVG.
−30_C
60
25_C −30_C
V
DD
= 28 Vdc, I
DQ
= 1100 mA, f = 465 MHz
Single −Carrier N−CDMA
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
85_C
25_C G
ps
ACPR
T
C
= −30_C
85_C
η
D
ALT1
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
ACPR (dBc), ALT1 (dBc)
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
6
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
