Freescale Semiconductor
Technical Data
Document Number: MMG3014NT1
Rev. 0, 4/2008
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3014NT1 is a General Purpose Amplifier that is internally
input matched and internally output prematched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 4000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
Features
•
Frequency: 40 - 4000 MHz
•
P1dB: 25 dBm @ 900 MHz
•
Small - Signal Gain: 19.5 dB @ 900 MHz
•
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
•
Single 5 Volt Supply
•
Active Bias
•
Low Cost SOT - 89 Surface Mount Package
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
MMG3014NT1
40 - 4000 MHz, 19.5 dB
25 dBm
InGaP HBT
12
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small - Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
IP3
900
MHz
19.5
- 25
- 11
25
40.5
2140
MHz
15
- 12
−13
25.8
40.5
3500
MHz
10
-8
- 19
25
40
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
6
300
15
- 65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
CC
= 5 Vdc, T
C
= 25°C, 50 ohm system
Table 3. Thermal Characteristics
(V
CC
= 5 Vdc, I
CC
= 135 mA, T
C
= 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(3)
27.4
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MMG3014NT1
1
RF Device Data
Freescale Semiconductor