ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF186/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
•
Guaranteed Performance @ 960 MHz, 28 Volts
Output Power — 120 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
•
Excellent Thermal Stability
•
100% Tested for Load Mismatch Stress at all Phase Angles with
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
MRF186
1.0 GHz, 120 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–04, STYLE 1
NI–860
ARCHIVED 2005
MAXIMUM RATINGS
(2)
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
T
J
Value
65
65
±20
14
162.5
1.25
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
(2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.8
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF186
1
Archived 2005
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
