Freescale Semiconductor
Technical Data
Document Number: MRF19030
Rev. 12, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
•
CDMA Performance @ 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc in 30 kHz BW
1.25 MHz — - 55 dBc in 12.5 kHz BW
2.25 MHz — - 55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030LR3
MRF19030LSR3
1930- 1990 MHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19030LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
83.3
0.48
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.1
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
