Freescale Semiconductor
Technical Data
Document Number: MRF19085
Rev. 8, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 26 Volts,
I
DQ
= 850 mA, P
out
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF19085LR3
MRF19085LSR3
1930- 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF19085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19085LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
273
1.56
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
0.79
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19085LR3 MRF19085LSR3
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
