TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
39
38
η
, DRAIN EFFICIENCY (%)
37
IMD
36
35
34
33
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
V
DD
, DRAIN SUPPLY (V)
−29
−30
−31
−32
28.0
η
I
DQ
= 850 mA
f = 1960 MHz
100 kHz Tone Spacing
−26
−27
−28
14.0
I
DQ
= 1150 mA
G ps , POWER GAIN (dB)
13.5
1000 mA
850 mA
13.0
700 mA
12.5
550 mA
12.0
V
DD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
4
10
P
out
, OUTPUT POWER (WATTS)
100
11.5
Figure 9. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
Figure 10. Two-Tone Power Gain versus Output
Power
G ps , POWER GAIN (dB),
η
, DRAIN EFFICIENCY (%)
η
35
30
25
20
15
10
1920
1930
1940
1950
V
DD
= 26 Vdc
P
out
= 90 W (PEP)
I
DQ
= 850 mA
100 kHz Tone Spacing
IMD
G
ps
1960
1970
1980
1990
IRL
−10
−15
−20
−25
−30
−35
2000
f, FREQUENCY (MHz)
Figure 11. Two-Tone Broadband Performance
MRF19085LR3 MRF19085LSR3
RF Device Data
Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
−5
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
