Freescale Semiconductor
Technical Data
Document Number: MRF19090
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
•
Typical CDMA Performance: 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts Avg.
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: - 47 dBc @ 30 kHz BW
1.25 MHz: - 55 dBc @ 12.5 kHz BW
2.25 MHz: - 55 dBc @ 1 MHz BW
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19090R3
MRF19090SR3
1930- 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF19090R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19090SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
270
1.54
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.65
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19090R3 MRF19090SR3
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
