Freescale Semiconductor
Technical Data
Document Number: MRF21060
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
multicarrier amplifier applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Drain Efficiency — 15%
ACPR @ 5 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF21060LR3
MRF21060LSR3
2110 - 2170 MHz, 60 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21060LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21060LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
180
0.98
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.02
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21060LR3 MRF21060LSR3
1
RF Device Data
Freescale Semiconductor