Freescale Semiconductor
Technical Data
Document Number: MRF21125
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - Carrier W - CDMA Performance for V
DD
= 28 Volts, I
DQ
=
1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =
3.84 MHz, adjacent channels at
±
5 MHz , ACPR and IM3 measured in
3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — - 43 dBc
ACPR — - 45 dBc
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125R3
MRF21125SR3
2110 - 2170 MHz, 125 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF21125R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF21125SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
330
1.89
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.53
Unit
°C/W
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
