Freescale Semiconductor
Technical Data
Document Number: MRF372
Rev. 9, 5/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
32 volt transmitter equipment.
•
Typical Narrowband Two - Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — - 35 dBc
•
Typical Broadband Two - Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — - 31 dBc
•
Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Power
Features
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
C
T
J
MRF372R3
MRF372R5
470 - 860 MHz, 180 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Value
- 0.5, +68
- 0.5, +15
17
350
2.0
- 65 to +150
150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.5
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF372R3 MRF372R5
1
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
