Freescale Semiconductor
Technical Data
MRF9060
Rev. 8, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applica-
tions in 26 volt base station equipment.
•
Typical Two−Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD —
−31
dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large−Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MRF9060LR1
MRF9060LSR1
945 MHz, 60 W, 26 V
LATERAL N−CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B−05, STYLE 1
NI−360
MRF9060LR1
CASE 360C−05, STYLE 1
NI−360S
MRF9060LSR1
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF9060LR1
MRF9060LSR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Symbol
V
DSS
V
GS
P
D
Value
−0.5,
+65
−0.5,
+ 15
159
0.91
219
1.25
−65
to +150
200
Unit
Vdc
Vdc
W
W/°C
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
MRF9060LR1
MRF9060LSR1
Symbol
R
θJC
Value
1.1
0.8
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE
−
CAUTION
−
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF9060LR1 MRF9060LSR1
5−1
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
