Freescale Semiconductor
Technical Data
Document Number: MW6S010
Rev. 1, 5/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
•
Typical Two - Tone Performance @ 960 MHz, V
DD
= 28 Volts, I
DQ
=
125 mA, P
out
= 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
On - Chip RF Feedback for Broadband Stability
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
N Suffix Indicates Lead - Free Terminations
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
61.4
0.35
- 65 to +175
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
Symbol
R
θJC
Value
(1.2)
2.85
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
