Table 5. Electrical Characteristics
(T
C
= 25°C, unless otherwise noted) (
continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM/GSM EDGE Performances
(In Freescale GSM/GSM EDGE Test Fixture, 50
οhm
system) V
DD
= 27 Vdc, I
DQ1
= 90 mA, I
DQ2
=
240 mA, 921 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
Power Gain @ P
out
= 30 W CW
Power Added Efficiency @ P
out
= 30 W CW
Input Return Loss @ P
out
= 30 W CW
Intermodulation Distortion
(15 W, 2 - Tone, 100 kHz Tone Spacing)
Intermodulation Distortion
(1 W, 2 - Tone, 100 kHz Tone Spacing)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 30 W CW
Deviation from Linear Phase in 40 MHz Bandwidth @ P
out
= 30 W CW
P1dB
G
ps
PAE
IRL
IMD
IMD
backoff
G
F
Φ
—
—
—
—
—
—
—
—
30
30
45
- 12
- 30
- 45
0.3
0.6
—
—
—
—
—
—
—
—
W
dB
%
dB
dBc
dBc
dB
°
MWIC930NR1 MWIC930GNR1
RF Device Data
Freescale Semiconductor
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
