Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
SILICON EPITAXIAL PLANAR DIODE
1N914 1N914A 1N914B
FEATURES
FAST SWITCHING
SMALL BODY
0.52∅
3.9∅
MECHANICAL DATA
CASE GLASS, DO35, DIMENSIONS IN INCHES AND (MILLIMETERS)
LEADS SOLDERABLE PER MIL-STD-202, METHOD 208
POLARITY CATHODE INDICATED BY COLOR BAND
WEIGHT 0.13 GRAMS
1.9
∅
27.5
MIN
RATINGS
REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
RECTIFIED CURRENT (AVERAGE)
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT T
amb
=25 ºC AND
≥
50Hz.
SURGE FORWARD CURRENT AT T < 1 s AND T
J
=25 ºC
POWER DISSIPATION AT T
amb
=25 ºC
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
SYMBOL
V
R
V
RM
I
O
I
FSM
P
TOT
T
J
T
S
1N914
1N914A
75
100
75
500
500
200
- 55 TO + 200
1N914B
UNITS
V
V
mA
mA
mW
ºC
ºC
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
SYMBOL
MIN
FORWARD VOLTAGE AT I
F
=10mA ( 1N914 )
FORWARD VOLTAGE AT I
F
=20mA ( 1N914A )
-
V
F
FORWARD VOLTAGE AT I
F
=100mA ( 1N914B )
LEAKAGE CURRENT
AT V
R
=20V
I
R
-
-
AT V
R
=75V
I
R
-
AT V
R
=20V T
J
=150 ºC
I
R
REVERSE BREAKDOWN VOLTAGE
V
R
100
TESTED WITH 100μA PULSES
CAPACITANCE AT V
F
=V
R
=0
C
TOT
-
VOLTAGE RISE WHEN SWITCHING ON
TESTED WITH 50mA FORWARD PULSES
V
FR
-
TP=0.1μS RISE TIME＜30ns F
P
=50 TO 100 KHZ
REVERSE RECOVERY TIME
FROM I
F
=10mA TO I
R
=1mA V
R
=6V R
L
=100Ω
THERMAL RESISTANCE
FUNCTION TO AMBLENT AIR
RECTIFICATION EFFICIENCY
AT F=100 MHZ V
RF
=2V
T
RR
R
THA
N
V
-
-
0.45
TYP
-
MAX
1
UNITS
V
-
-
-
-
-
-
25
5
50
-
4
2.5
nA
μA
μA
V
PF
V
-
-
-
4
0.35
-
nS
K / mW
-
1N914 1N914A 1N914B
Page: 1
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