IGBT MODULE ( N series )
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Less Total Power Dissipation
•
Improved FWD Characteristic
•
Minimized Internal Stray Inductance
•
Overcurrent Limiting Function (4~5
Times Rated Current)
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous
I
C
1ms
I
C PULSE
Continuous
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Terminals *3
Ratings
1200
±
20
200
400
200
400
1500
+150
-40
∼
+125
2500
3.5
4.5
1.7
Units
V
V
A
W
°C
°C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
∼
4.5 Nm (M6)
*3:Recommendable Value; 1.3
∼
1.7 Nm (M4)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=200mA
V
GE
=15V I
C
=200A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=200A
V
GE
=± 15V
R
G
=4.7Ω
I
F
=200A V
GE
=0V
I
F
=200A
Min.
Typ.
Max.
4.0
60
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
4.5
32000
11600
10320
0.65
0.25
0.85
0.35
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.085
0.22
Units
°C/W
0.0125
FUJI [ FUJI ELECTRIC ]
