IGBT MODULE ( N series )
n
Outline Drawing
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Overcurrent Limiting Function (~3 Times Rated Current)
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Collector-Emitter Voltage
V
CES
Gate -Emitter Voltage
V
GES
Continuous
I
C
Collector
1ms
I
C PULSE
Current
Continuous
-I
C
1ms
-I
C PULSE
Max. Power Dissipation
P
C
Operating Temperature
T
j
Storage Temperature
T
stg
Isolation Voltage
A.C. 1min.
V
is
Mounting *1
Screw Torque
Terminals *1
Ratings
600
±
20
200
400
200
400
780
+150
-40
∼
+125
2500
3.5
3.5
Units
V
V
A
W
°C
°C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Currrent
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
I
RRM
Test Conditions
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=200mA
V
GE
=15V I
C
=200A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=200A
V
GE
=± 15V
R
G
=9.1Ω
I
F
=200A V
GE
=0V
I
F
=200A
V
R
=600V
Min.
Typ.
Max.
2.0
30
7.5
2.8
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.35
3.0
300
2.0
4.5
13200
2930
1330
0.6
0.2
0.6
0.2
µs
V
ns
mA
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.16
0.35
Units
°C/W
0.025
FUJI [ FUJI ELECTRIC ]
