Switching time vs. R
G
V
CC
=600V, I
C
= 3 0 0 A , V
GE
= ± 1 5 V , T
j
= 2 5 ° C
1000
Dynamic input characteristics
T
j
= 2 5 ° C
25
V
CC
= 4 0 0 V
600V
800
800V
20
[nsec]
t
off
t
on
1000
CE
on
, t
r
, t
off
, t
f
Collector-Emitter voltage : V
[V]
600
15
Switching time : t
t
r
t
f
400
10
200
100
5
1
10
Gate resistance : R
G
[
Ω
]
Forward current vs. Forward voltage
V
GE
= O V
0
0
500
0
1000 1500 2000 2500 3000 3500 4000
G a t e c h a r g e : Q
G
[nC]
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
T
j
= 1 2 5 ° C 2 5 ° C
600
[nsec]
t
rr
1 2 5 ° C
I
rr
1 2 5 ° C
I
rr
2 5 ° C
t
rr
2 5 ° C
100
[A]
rr
[A]
F
Reverse recovery current : I
0
1
2
3
4
5
Forward current : I
200
0
0
200
400
600
Forward voltage : V
F
[V]
Reverse recovery time
400
:t
rr
Forward current : I
F
[A]
Reversed biased safe operating area
Transient thermal resistance
3000
+ V
GE
= 1 5 V , - V
GE
< 1 5 V , T
j
< 1 2 5 ° C , R
G
> 2.7
Ω
Diode
[°C/W]
2500
0,1
[A]
C
IGBT
th(j-c)
2000
SCSOA
(non-repetitive pulse)
1500
Thermal resistance : R
0,01
Collector current : I
1000
500
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
1
0
200
400
600
800
1000
1200
Pulse width : PW [sec]
Collector-Emitter voltage : V
C E
[V]
FUJI [ FUJI ELECTRIC ]
