Switching time vs. R
G
V
CC
=600V, I
C
=400A, V
GE
=±15V, T
j
=25°C
1000
t
off
Dynamic input characteristics
T
j
=25°C
25
V
CC
=400V
600V
800
800V
600
15
20
[nsec]
on
, t
r
, t
off
, t
f
t
r
Collector-Emitter voltage : V
1000
CE
[V]
t
on
Switching time : t
400
10
t
f
200
100
5
0
1
Gate resistance : R
G
[
Ω
]
10
0
1000
2000
3000
[nC]
4000
Gate charge : Q
G
0
5000
Forward current vs. Forward voltage
V
GE
= O V
1000
T
j
=125°C
800
25°C
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
I
rr
125°C
[nsec]
[A]
t
rr
125°C
I
rr
25°C
[A]
rr
F
Reverse recovery current : I
Forward current : I
:t
600
rr
400
Reverse recovery time
t
rr
25°C
100
200
0
0
1
2
3
4
5
0
200
400
600
800
Forward voltage : V
F
[V]
Forward current : I
F
[A]
Reversed biased safe operating area
Transient thermal resistance
4000
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>1.8
Ω
[C/W]
Diode
th(j-c)
C
[A]
0,1
IGBT
3000
SCSOA
Collector current : I
Thermal resistance : R
(non-repetitive pulse)
2000
0,01
1000
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
1
0
200
400
600
800
1000
1200
Pulse width : PW [sec]
Collector-Emitter voltage : V
(CE)
[V]
FUJI [ FUJI ELECTRIC ]
