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1MBK30D-060S 参数 Datasheet PDF下载

1MBK30D-060S图片预览
型号: 1MBK30D-060S
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模 [Molded IGBT]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 5 页 / 444 K
品牌: FUJI [ FUJI ELECTRIC ]
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600V / 30A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
DC
Tc=25°C
current
Tc=100°C
1ms
Tc=25°C
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol
V
CES
V
GES
I
C25
I
C100
Icp
P
C
P
C
T
j
T
stg
-
Rating
600
±20
50
30
90
150
80
+150
-40 to +150
39.2 to 58.8
Unit
V
V
A
A
A
W
W
°C
°C
N·m
Equivalent Circuit Schematic
IGBT + FWD
C:Collector
G:Gate
E:Emitter
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
*
t
r
*
t
rr2
Turn-off time
Switching
Time
Turn-on time
t
off
t
f
t
on
*
t
r
*
t
rr2
t
off
t
f
V
F
t
rr
Characteristics
Min.
Typ.
4.0
5.0
2.4
1960
222
101
0.15
0.09
0.03
0.50
0.10
0.15
0.09
0.03
0.50
0.10
2.0
0.06
Conditions
Max.
1.0
10
6.0
2.9
0.62
0.17
0.62
0.17
2.5
0.10
V
GE
=0V, V
CE
=600V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=30mA
V
GE
=15V, I
C
=30A
V
GE
=0V
V
CE
=25V
f=1MHz
V
CC
=300V, I
C
=30A
V
GE
=±15V
R
G
=36 ohm
(Half Bridge)
Inductance Load
V
CC
=300V, I
C
=30A
V
GE
=+15V
R
G
=10 ohm
(Half Bridge)
Inductance Load
I
F
=30A, V
GE
=0V
I
F
=30A, V
GE
=-10V,
V
R
=300V, di/dt=100A/µs
V
µs
µs
µs
mA
µA
V
V
pF
Unit
Turn-off time
FWD forward on voltage
Reverse recovery time
*
Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
Conditions
Max.
0.83
1.56
IGBT
FWD
°C/W
°C/W
Unit