2MBI150VH-170-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
400
400
300
200
100
0
VGE= 20V
15V
15V
300
12V
10V
VGE=20V
12V
200
100
0
10V
8V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
400
8
Tj=25°C
125°C
6
300
150°C
4
200
100
0
Ic=300A
Ic=150A
Ic=75A
2
0
5
10
15
20
25
0
1
2
3
4
5
Collector-Emitter Voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=150A, Tj= 25°C
100
20
15
10
5
1200
900
600
300
0
Cies
VCE
10
0
Cres
-5
-300
-600
-900
-1200
1
-10
-15
-20
Coes
VGE
0.1
0
10
20
30
-2
-1
0
1
2
Collector-Emitter voltage: VCE [V]
Gate charge: Qg [μC]
2
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