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2MBI150N-120 参数 Datasheet PDF下载

2MBI150N-120图片预览
型号: 2MBI150N-120
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块( N系列) [IGBT MODULE ( N series )]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 4 页 / 101 K
品牌: FUJI [ FUJI ELECTRIC ]
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IGBT MODULE ( N series )
n
Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n
Outline Drawing
n
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous
I
C
1ms
I
C PULSE
Continuous
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1200
±
20
150
300
150
300
1100
+150
-40
+125
2500
3.5
4.5
Units
V
V
A
W
°C
°C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
4.5 Nm (M6)
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=150mA
V
GE
=15V I
C
=150A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=± 15V
R
G
=5.6Ω
I
F
=150A V
GE
=0V
I
F
=150A
Min.
Typ.
Max.
2.0
30
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
4.5
24000
8700
7740
0.65
0.25
0.85
0.35
µs
V
ns
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.11
0.33
Units
°C/W
0.025