2MBI 150PC-140
IGBT MODULE ( P-Series )
n
Features
•
Square SC SOA at 10 x I
C
•
Simplified Parallel Connection
•
Narrow Distribution of Characteristics
•
High Short Circuit Withstand-Capability
2-Pack IGBT
1400V
150A
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous T
C
=25°C
I
C
Continuous T
C
=80°C
1ms
T
C
=25°C
I
C PULSE
1ms
T
C
=80°C
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1400
±
20
200
150
400
300
150
300
1100
+150
-40
∼
+125
2500
3.5
3.5
Units
V
V
n
Equivalent Circuit
Collector
Current
A
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
W
°C
°C
V
Nm
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1400V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=150mA
T
j
= 25°C V
GE
=15V I
C
=150A
T
j
=125°C V
GE
=15V I
C
=150A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=± 15V
R
G
=5.6Ω
I
F
=150A V
GE
=0V
I
F
=150A
Min.
Typ.
Max.
2.0
400
9.0
3.0
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.3
3.3
350
6.0
8.0
2.7
3.3
15000
2000
1000
µs
V
ns
2.4
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.11
0.24
Units
°C/W
0.025
FUJI [ FUJI ELECTRIC ]
