2MBI200U2A-060 参数 Datasheet PDF下载

2MBI200U2A-060

IGBT Module U-Series

Features

· High speed switching

· Voltage drive

· Low inductance module structure

600V / 200A 2 in one-package

2. Equivalent circuit

Equivalent Circuit Schematic

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Symbol

V

CES

V

GES

I

C

I

C

p

-I

C

-I

C

pulse

P

C

T

j

T

stg

V

iso

Conditions

Rating

600

±20

200

400

200

400

660

+150

-40 to +125

2500

3.5

3.5

Unit

V

V

A

Continuous

1ms

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage between terminal and copper base *1

Screw Torque

Mounting *

2

Terminals *

2

1 device

W

°C

VAC

N·m

AC:1min.

*

1 :

All terminals should be connected together when isolation test will be done.

*

2 :

Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Symbols

I

CES

I

GES

V

GE(th)

V

CE(sat)

(terminal)

V

CE(sat)

(chip)

Input capacitance

Turn-on time

C

ies

t

on

t

r

t

r(i)

t

off

t

f

V

F

(terminal)

V

F

(chip)

t

rr

R lead

Conditions

V

GE

=0V, V

CE

=600V

V

CE

=0V, V

GE

=±20V

V

CE

=20V, I

C

=200mA

V

GE

=15V, I

C

=200A Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

V

CE

=10V, V

GE

=0V, f=1MHz

V

CC

=300V

I

C

=200A

V

GE

=±15V

R

G

= 16

Ω

V

GE

=0V

I

F

=200A

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

I

F

=200A

Characteristics

Min.

Typ.

–

–

–

6.2

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

6.7

2.15

2.40

1.85

2.10

14

0.40

0.22

0.16

0.48

0.07

1.90

1.95

1.60

1.65

–

1.39

Unit

Max.

1.0

200

7.7

2.45

–

–

–

–

1.20

0.60

–

1.20

0.45

2.30

–

–

–

0.35

–

nF

µs

mA

nA

V

V

Turn-off time

Forward on voltage

V

Reverse recovery time

Lead resistance, terminal-chip*

3

µs

mΩ

*

3

:Biggest internal terminal resistance among arm.

Thermal resistance characteristics

Items

Thermal resistance

Contact Thermal resistance

Symbols

Rth(j-c)

Rth(j-c)

Rth(c-f)*

4

Conditions

IGBT

FWD

With thermal compound

Characteristics

Min.

Typ.

–

–

–

–

–

0.05

Unit

Max.

0.19

0.32

–

°C/W

°C/W

°C/W

*

4

: This is the value which is defined mounting on the additional cooling fin with thermal compound.