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2MBI300N-060-04 参数 Datasheet PDF下载

2MBI300N-060-04图片预览
型号: 2MBI300N-060-04
PDF下载: 下载PDF文件 查看货源
内容描述: 600V / 300A 2中的一个包 [600V / 300A 2 in one-package]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 4 页 / 182 K
品牌: FUJI [ FUJI ELECTRIC ]
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2MBI300N-060-04
600V / 300A 2 in one-package
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous
current
1ms
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Terminals *
1
Rating
600
±20
300
600
300
600
1100
+150
-40 to +125
AC 2500 (1min.)
3.5
3.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
C1
E2
¤
¤
VCE(sat) classification
*
1 :
Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
I
CES
I
GES
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
re
ot
N
C
oes
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
V
GE(th)
V
CE(sat)
C
ies
mm
co
Characteristics
Min.
Typ.
4.5
19800
4400
2000
0.6
0.2
0.6
0.2
for
nd
e
Max.
2.0
30
7.5
2.8
1.2
0.6
1.0
0.35
3.0
0.3
ne
Rank
F
A
B
C
D
Conditions
Lenge
1.85 to 2.10V
2.00
2.15
2.30
2.50
de
w
n.
sig
to 2.25V
to 2.40V
to 2.60V
to 2.80V
Unit
mA
µA
V
V
pF
G1
E1
G2
¤ Current control circuit
E2
Conditions
Ic = 300A
V
GE
= 15V
Tj = 25°C
V
GE
=0V, V
CE
=600V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=300mA
V
GE
=15V, I
C
=300A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=300A
V
GE
=±15V
R
G
=6.8ohm
I
F
=300A, V
GE
=0V
I
F
=300A
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Typ.
0.025
Conditions
Max.
0.11
0.24
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
Unit
Thermal resistance
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound