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2MBI300UC-120 参数 Datasheet PDF下载

2MBI300UC-120图片预览
型号: 2MBI300UC-120
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT MODULE]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 6 页 / 330 K
品牌: FUJI [ FUJI ELECTRIC ]
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2MBI300UC-120
IGBT MODULE (U series)
1200V / 300A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Ic pulse
Conditions
Maximum ratings
1200
±20
400
300
800
600
300
600
1470
150
-40 to +125
2500
3.5
4.5
Units
V
V
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1)
V
iso
Mounting (*2)
Screw torque
Terminals (*2)
1 device
AC : 1min.
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(teminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(teminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 300mA
Tj=25°C
Tj=125°C
V
GE
= 15V
I
C
= 300A
Tj=25°C
Tj=125°C
V
GE
= 0V, V
CE
= 10V, f = 1MHz
V
CC
= 600V
I
C
= 300A
V
GE
= ±15V
R
G
= 1.1Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Characteristics
min.
typ.
max.
-
-
2.0
-
-
400
4.5
6.5
8.5
-
1.90
2.25
-
2.15
-
-
1.75
2.10
-
2.00
-
-
34
-
-
0.36
1.20
-
0.21
0.60
-
0.03
-
-
0.37
1.00
-
0.07
0.30
-
1.75
2.05
-
1.85
-
-
1.60
1.90
-
1.70
-
-
-
0.35
-
0.53
-
Units
mA
nA
V
V
nF
µs
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
GE
= 0V
I
F
= 300A
I
F
= 300A
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.085
-
-
0.14
-
0.025
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1