IGBT MODULE ( N series )
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Less Total Power Dissipation
•
Improved FWD Characteristic
•
Minimized Internal Stray Inductance
•
Overcurrent Limiting Function (4~5 Times Rated Current)
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
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Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous
I
C
1ms
I
C PULSE
Continuous
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1200
±
20
50
100
50
100
400
+150
-40
∼
+125
2500
3.5
3.5
Units
V
V
A
W
°C
°C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=50mA
V
GE
=15V I
C
=50A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=50A
V
GE
=± 15V
R
G
=24Ω
I
F
=50A V
GE
=0V
I
F
=50A
Min.
Typ.
Max.
1.0
15
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
4.5
8000
2900
2580
0.65
0.25
0.85
0.35
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.31
0.85
Units
°C/W
0.05